Скачать даташит для irgsl30b60k:

PD - 94799AIRGB30B60KIRGS30B60KIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesIC = 50A, TC=100C Low VCE (on) Non Punch Through IGBT Technology.at TJ=175C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature rated at 175C.VCE(on) typ. = 1.95Vn-channelBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-220AB D2Pak TO-262IRGB30B60K IRGS30B60K IRGSL30B60KAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Voltage 600 V78 IC @ TC = 25C Continuous Collector CurrentIC @ TC = 100C Continuous Collector Current 50 AICM Pulse Collector Current (Ref.Fig.C.T.5) 120Clamped Inductive Load