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PD - 97355BIRGS4062DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL4062DPbFULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG Square RBSOA tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)E Positive VCE (ON) Temperature co-efficientVCE(on) typ. = 1.65V Ultra fast soft Recovery Co-Pak Dioden-channel Tight parameter distribution Lead Free PackageCCBenefits High Efficiency in a wide range of applications EEC Suitable for a wide range of switching frequencies due toGGLow VCE (ON) and Low Switching lossesD2Pak TO-262 Rugged transient Performance for increased reliabilityIRGS4062DPbF IRGSL4062DPbF Excellent Cur