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PD- 95084AIRLR/U2905PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR2905)VDSS = 55Vl Straight Lead (IRLU2905)l Advanced Process TechnologyRDS(on) = 0.027l Fast SwitchingGl Fully Avalanche RatedID = 42Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance persilicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a widevariety of applications. D-Pak I-PakThe D-PAK is designed for surface mounting using vapor phase, infrared, orTO-252AA TO-251AAwave soldering techniques. The straight lead version (IRFU series) is forthrough-ho

 

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 irlr2905pbf irlu2905pbf.pdf Проектирование, MOSFET, Мощность

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 irlr2905pbf irlu2905pbf.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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