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PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features ofthis design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating These features combineto make this design an extremely efficient andD-Pak I-Pakreliable device for use in a wide variety of applications.IRLR2905ZPbF IRLU2905ZPbFAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, VGS @ 10V (Silicon Limited)ID @ TC = 25C 60Continuous Drain C