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Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.101 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25oC)10.7IDAoContinuous Drain Current (TC=100 C)7.5IDM Drain Current-Pulsed1 49 AOVGS Gate-to-Source Voltage_ V2EAS Single Pulsed Avalanche Energy228 mJ OIAR Avalanche Current1 10.7 AOEAR Repetitive Avalanche Energy 1 3.6 mJ O3dv/dt Peak Diode Recovery dv/dt 6.5 V/ns OTotal Power Dissipation (TC=25 oC)36 WPDoLinear Derating Factor C0.2