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VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TMIXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement ModeHigh dV/dt, Low t , HDMOSTM FamilyrrSymbol Test Conditions Maximum Ratings ISOPLUS 247TME153432VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 VVGSM Transient 30 VGIsolated back surface*DID25 TC = 25C 26N50Q 24 A24N50Q 22 AIDM TC = 25C, Pulse width limited by TJM 26N50Q 104 AG = Gate D = Drain24N50Q 96 AS = SourceIAR TC = 25C 26N50Q 26 A24N50Q 24 A* Patent pendingEAR TC = 25C30 mJEAS TC = 25C 1.5 JFeaturesdv/dt IS IDM, di/dt 100 A/s, VDD VDSS 5 V/ns Silicon chip on Direct-Copper-BondTJ 150C,

 

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 ixfr24n50q ixfr26n50q.pdf Проектирование, MOSFET, Мощность

 ixfr24n50q ixfr26n50q.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixfr24n50q ixfr26n50q.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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