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VCES = 1200VGenX3TM 1200V IGBT IXGH30N120B3D1IC110 = 30A IXGT30N120B3D1VCE(sat) 3.5Vtfi(typ) = 204nsHigh speed Low Vsat PTIGBTs 3-20 kHz switchingSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 110C30 AC C (TAB)EIF110 TC = 110C28 AICM TC = 25C, 1ms 150 ATO-268 (IXGT)SSOA VGE = 15V, TVJ = 125C, RG = 5 ICM = 60 A(RBSOA) Clamped inductive load @ 0.8 VCEPC TC = 25C 300 WGTJ -55 ... +150 CEC (TAB)TJM 150 CG = Gate C = CollectorTstg -55 ... +150 CE = Emitter TAB = CollectorMd Mounting torque (TO-247) 1.13 / 10 Nm/lb.in.TL Maximum lead temperature for soldering 300 CTSOLD 1.6mm (0.062 in.) from case for 10s 260 CFeaturesWeight TO-247

 

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 ixgh30n120b3d1.pdf Проектирование, MOSFET, Мощность

 ixgh30n120b3d1.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh30n120b3d1.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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