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IXGH30N60B VCES = 600 VHiPerFASTTM IGBTIXGT30N60B IC25 = 60 AVCE(sat) = 1.8 Vtfi = 100 nsSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C60 AIC110 TC = 110C30 ATO-268 (D3)ICM TC = 25C, 1 ms 120 A(IXGT)SSOA VGE= 15 V, TVJ = 125C, RG = 33 W ICM = 60 AG(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES (TAB)EPC TC = 25C 200 WTJ -55 ... +150 CTJM 150 C G = Gate, C = Collector,E = Emitter, TAB = CollectorTstg -55 ... +150 CMaximum lead temperature for soldering 300 CFeatures1.6 mm (0.062 in.) from case for 10 s International standard packagesMd Mounting torque (M3) 1.13/10 Nm/lb.in.JEDEC TO-268 surfacemountable and JEDEC TO-247 ADWeight 6 g High c

 

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 ixgh30n60b.pdf Проектирование, MOSFET, Мощность

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 ixgh30n60b.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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