Скачать даташит для ixgh30n60b4:
Preliminary Technical InformationHigh-Gain IGBT VCES = 600VIXGH30N60B4IC110 = 30A VCE(sat) 1.7V tfi(typ) = 88nsMedium-Speed PT Trench IGBTTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C 66 AG = Gate C = CollectorIC110 TC = 110C 30 AE = Emitter Tab = CollectorICM TC = 25C, 1ms 156 ASSOA VGE = 15V, TVJ = 125C, RG = 10 ICM = 48 A(RBSOA) Clamped Inductive Load @ VCESFeaturesPC TC = 25C 190 W Optimized for Low Conduction andTJ -55 ... +150 C Switching LossesTJM 150 C Square RBSOATstg -55 ... +150 C International Standard PackageTL Maximum Lead Temperature for Soldering 300 CTSOLD 1.6 mm (0.062in.) from Case for 10s 260 CAdvantages
Ключевые слова - ALL TRANSISTORS DATASHEET
ixgh30n60b4.pdf Проектирование, MOSFET, Мощность
ixgh30n60b4.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
ixgh30n60b4.pdf База данных, Инновации, ИМС, Транзисторы



Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet