Справочник транзисторов.

 

Скачать даташит для ixgh30n60b4:

ixgh30n60b4ixgh30n60b4

Preliminary Technical InformationHigh-Gain IGBT VCES = 600VIXGH30N60B4IC110 = 30A VCE(sat) 1.7V tfi(typ) = 88nsMedium-Speed PT Trench IGBTTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C 66 AG = Gate C = CollectorIC110 TC = 110C 30 AE = Emitter Tab = CollectorICM TC = 25C, 1ms 156 ASSOA VGE = 15V, TVJ = 125C, RG = 10 ICM = 48 A(RBSOA) Clamped Inductive Load @ VCESFeaturesPC TC = 25C 190 W Optimized for Low Conduction andTJ -55 ... +150 C Switching LossesTJM 150 C Square RBSOATstg -55 ... +150 C International Standard PackageTL Maximum Lead Temperature for Soldering 300 CTSOLD 1.6 mm (0.062in.) from Case for 10s 260 CAdvantages

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 ixgh30n60b4.pdf Проектирование, MOSFET, Мощность

 ixgh30n60b4.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh30n60b4.pdf База данных, Инновации, ИМС, Транзисторы

 

 
Back to Top

 


 
.