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HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 VIXGT 30N60BU1 IC25 = 60 Awith DiodeVCE(sat) = 1.8 VCombi Packtfi = 100 nsTO-268(IXGT)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AC (TAB)IC110 TC = 110C30 AGICM TC = 25C, 1 ms 120 ACESSOA VGE = 15 V, TVJ = 125C, RG = 33 ICM = 60 AG = Gate, C = Collector,(RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCESE = Emitter, TAB = CollectorPC TC = 25C 200 WFeaturesTJ -55 ... +150 C International standard packagesTJM 150 CJEDEC TO-247 SMD surfaceTstg -55 ... +150 Cmountable and JEDEC TO-247 AD High frequency IGBT and antiparallelMaximum Lead and Tab temperature for soldering 300 C1.6 mm (0.062 in.) from case