Справочник транзисторов.

 

Скачать даташит для ixgh30n60c2_ixgt30n60c2:

ixgh30n60c2_ixgt30n60c2ixgh30n60c2_ixgt30n60c2

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC = 110C30 AICM TC = 25C, 1 ms 150 ASSOA VGE = 15 V, TVJ = 125C, RG = 10 ICM = 60 A C (TAB)G(RBSOA) Clamped inductive load @ 600 VCEPC TC = 25C 190 WG = Gate, C = Collector,TJ -55 ... +150 CE = Emitter, TAB = CollectorTJM 150 CTstg -55 ... +150 CFeaturesMaximum lead temperature for soldering 300 C1.6 mm (0.062 in.) from case for 10 s Very high frequency IGBTPlastic body for 10s 250 C Square RBSOA Md Mounting torque (M3) (TO-247)

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 ixgh30n60c2 ixgt30n60c2.pdf Проектирование, MOSFET, Мощность

 ixgh30n60c2 ixgt30n60c2.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh30n60c2 ixgt30n60c2.pdf База данных, Инновации, ИМС, Транзисторы

 

 
Back to Top

 


 
.