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GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 60 A G IC110 TC = 110C 30 A C C (Tab) E ICM TC = 25C, 1ms 150 A TO-247 (IXGH) SSOA VGE = 15V, TVJ = 125C, RG = 5 ICM = 60 A (RBSOA) Clamped Inductive Load @ VCES PC TC = 25C 220 W G TJ -55 ... +150 C C E C (Tab) TJM 150 C Tstg -55 ... +150 C G = Gate D = Collector S = Emitter Tab = Collector TL 1.6mm (0.062 in.) from Case for 10s 300 C TSOLD Plastic Body for 10 seconds 260 C Features Md Mou
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ixgh30n60c3.pdf Проектирование, MOSFET, Мощность
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