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GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C (Tab) E IC25 TC = 25C 60 A IC110 TC = 110C 30 TO-247 (IXGH) A IF110 TC = 110C 13 A ICM TC = 25C, 1ms 150 A SSOA VGE = 15V, TVJ = 125C, RG = 5 ICM = 60 A (RBSOA) Clamped Inductive Load @ VCES G C E C (Tab) PC TC = 25C 220 W TJ -55 ... +150 C G = Gate D = Collector TJM 150 C S = Emitter Tab = Collector Tstg -55 ... +150 C Features TL 1.6mm