Скачать даташит для ixgh30n60c3d1:

GenX3TM 600V IGBTsVCES = 600VIXGH30N60C3D1w/ DiodeIC110 = 30AIXGT30N60C3D1VCE(sat) 3.0Vtfi(typ) = 47nsHigh-Speed PT IGBTs for40-100 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VC (Tab)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C 60 AIC110 TC = 110C 30 AIF110 TC = 110C 30 AICM TC = 25C, 1ms 150 AGSSOA VGE = 15V, TVJ = 125C, RG = 5 ICM = 60 A CC (Tab)E(RBSOA) Clamped Inductive Load @ VCESPC TC = 25C 220 WG = Gate C = CollectorE = Emitter Tab = CollectorTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CTL 1.6mm (0.062 in.) from Case for 10s 300 CFeaturesTSOLD Plastic Body for 10 seconds 260 C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Optimiz