Скачать даташит для ixgh32n120a3:

GenX3TM 1200V VCES = 1200VIXGH32N120A3IGBTs IC110 = 32AIXGT32N120A3VCE(sat) 2.35VUltra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VC (Tab)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 75 AIC110 TC = 110C 32 AICM TC = 25C, 1ms 230 AGIA TC = 25C 20 ACC (Tab)EEAS TC = 25C 120 mJSSOA VGE= 15V, TJ = 125C, RG = 20 ICM = 150 AG = Gate C = Collector(RBSOA) Clamped Inductive Load VCE 0.8 VCESE = Emitter Tab = CollectorPC TC = 25C 300 WTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CFeaturesTL 1.6mm (0.063in) from Case for 10s 300 C Optimized for Low Conduction LossesTSOLD Plastic Body for 10s 260