Скачать даташит для ixgh32n170a_ixgt32n170a:

IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 ASSOA VGE = 15 V, TVJ = 125C, RG = 5 ICM = 70 AC (TAB)(RBSOA) Clamped inductive load @ 0.8 VCESGCEtSC TJ = 125C, VCE = 1200 V; VGE = 15 V, RG = 10 10 sG = Gate, C = Collector,E = Emitter, TAB = CollectorPC TC = 25C 350 WTJ -55 ... +150 CFeaturesTJM 150 C International standard packagesTstg -55 ... +150 CJEDEC TO-268 andJEDEC TO-247 ADMd Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. High current handling capability MOS Gate turn-on