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IXGH 32N60AIXGH 32N60ASVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTVCE(sat) = 2.9 Vtfi = 125 nsTO-247 SMD(32N60AS)Symbol Test Conditions Maximum RatingsC (TAB)VCES TJ = 25C to 150C 600 V GEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)GICM TC = 25C, 1 ms 120 ACESSOA VGE= 15 V, TVJ = 125C, RG = 33 ICM = 64 AG = Gate C = Collector(RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCESE = Emitter TAB = CollectorPC TC = 25C 200 WTJ -55 ... +150 CTJM 150 CFeaturesTstg -55 ... +150 C International standard packagesJEDEC TO-247 SMD surfaceMaximum lead temperature for soldering 300 Cmountable and JEDEC TO-247 AD1.6 mm (0.062 in.) from case for 10 sHigh current handling capabilityMd Mounting torque (M3) 1.1

 

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 ixgh32n60a.pdf Проектирование, MOSFET, Мощность

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 ixgh32n60a.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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