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IXGH 32N60C VCES = 600 VHiPerFASTTM IGBTIXGT 32N60C IC25 = 60 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 55 nsTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD (IXGH)IC110 TC = 110C32 AICM TC = 25C, 1 ms 120 AC (TAB)SSOA VGE= 15 V, TVJ = 125C, RG = 10 W ICM = 64 A(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES GCEPC TC = 25C 200 WG = Gate, C = Collector,TJ -55 ... +150 CE = Emitter, TAB = CollectorTJM 150 CTstg -55 ... +150 CFeaturesMaximum lead temperature for soldering 300 C1.6 mm (0.062 in.) from case for 10 s International standard packagesJEDEC TO-247 and surfaceMd Mounting torque (M3) 1.13/10 Nm/lb.in.mountable TO-268We

 

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 ixgh32n60c.pdf Проектирование, MOSFET, Мощность

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 ixgh32n60c.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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