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IXGH 32N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 32N60CD1 IC25 = 60 Awith DiodeVCE(SAT)typ = 2.1 Vtfi(typ) = 55 nsLight Speed SeriesTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 VC (TAB)CVGEM Transient 30 V EIC25 TC = 25C60 AIC90 TC = 90C32 ATO-268 (D3) ( IXGT)ICM TC = 25C, 1 ms 120 ASSOA VGE = 15 V, TVJ = 125C, RG = 10 ICM = 64 A(RBSOA) Clamped inductive load @ 0.8 VCESGC (TAB)PC TC = 25C 200 WETJ -55 ... +150 CTJM 150 CG = Gate C = CollectorTstg -55 ... +150 CE = EmitterMaximum Lead and Tab temperature for soldering 300 C1.6 mm (0.062 in.) from case for 10 sFeaturesMd Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. International standard TO-247ADWeight TO-247 AD 6 gpackage TO-268 5

 

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 ixgh32n60cd1.pdf Проектирование, MOSFET, Мощность

 ixgh32n60cd1.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh32n60cd1.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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