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Advance Technical InformationIXGH 32N90B2 VCES = 900 VHiPerFASTTM IGBTIXGT 32N90B2 IC25 = 64 AB2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 150 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25C (limited by leads) 64 ATO-268 (IXGT)IC110 TC = 110C32 AICM TC = 25C, 1 ms 200 ASSOA VGE = 15 V, TVJ = 125C, RG = 10 ICM = 64 A GC (TAB)E(RBSOA) Clamped inductive load @ 600VPC TC = 25C 300 WG = Gate, C = Collector,TJ -55 ... +150 CE = Emitter, TAB = CollectorTJM 150 CTstg -55 ... +150 CFeaturesMaximum lead temperature for soldering 300 C High frequency IGBT1.6 mm (0.062 in.) from case for 10 s High current handling capabilityPlastic body for 10 s 260

 

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 ixgh32n90b2.pdf Проектирование, MOSFET, Мощность

 ixgh32n90b2.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh32n90b2.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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