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Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGH36N60A3D4with Diode IC110 = 36AVCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC110 TC = 110C 36 AIF110 TC = 110C 10 AG = Gate C = CollectorICM TC = 25C, 1ms 200 A E = Emitter TAB = CollectorSSOA VGE = 15V, TVJ = 125C, RG = 5 ICM = 60 A(RBSOA) Clamped inductive load @ 600VFeaturesPC TC = 25C 220 W TJ -55 ... +150 COptimized for low conduction losses Square RBSOATJM 150 C Anti-parallel ultra fast diodeTstg -55 ... +150 C International standard packageTL 1.6mm (0.062 in.) from case for 10s 300 CAdvantagesTSOLD P