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VCES = 600VGenX3TM 600V IGBTIXGH36N60B3D4IC110 = 36AVCE(sat) 1.8VMedium speed low Vsat PTIGBT for 5-40kHz switchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 V GTABCVGEM Transient 30 VEIC110 TC = 110C 36 AIF110 TC = 110C 10 AICM TC = 25C, 1ms 200 AG = Gate C = CollectorSSOA VGE= 15V, TJ = 125C, RG = 5 ICM = 80 AE = Emitter TAB = Collector (RBSOA) Clamped inductive load @VCE 600V PC TC = 25C 250 WFeaturesTJ -55 ... +150 CTJM 150 C Optimized for low conduction andTstg -55 ... +150 C switching losses Md Mounting torque 1.13/10 Nm/lb.in.Square RBSOA Anti-parallel ultra fast diodeTL Maximum lead temperature for soldering 300 C International s

 

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 ixgh36n60b3d4.pdf Проектирование, MOSFET, Мощность

 ixgh36n60b3d4.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh36n60b3d4.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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