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Advance Technical InformationIXGR 32N170AH1VCES = 1700 VHigh VoltageIC25 = 26 AIGBT with DiodeVCE(sat) = 5.2 VElectrically Isolated Tabtfi(typ) = 50 nsSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25C26 AG = Gate, C = Collector,IC90 TC = 90C14 AE = EmitterIF90 14 AICM TC = 25C, 1 ms 200 ASSOA VGE = 15 V, TVJ = 125C, RG = 5 ICM = 70 A(RBSOA) Clamped inductive load @ 0.8 VCESFeaturestSC TJ = 125C, VCE = 1200 V; VGE = 15 V, RG = 10 10 s Electrically Isolated tab High current handling capabilityPC TC = 25C 200 W MOS Gate turn-onTJ -55 ... +150 C - drive simplicity Rugged NPT structureTJM 150 C Molding epoxies meet UL 94 V-0