Скачать даташит для ixsh24n60a:

Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Emitter TAB = CollectorIC90 TC = 90C24 AICM TC = 25C, 1ms 96 AFeaturesSSOA VGE = 15V, TJ = 125C, RG = 10 ICM = 48 A International standard package(RBSOA) Clamped inductive load @0.8 VCES VJEDEC TO-247ADtSC VGE = 15V, VCE = 360V, TJ = 125C 10 s High frequency IGBT with guaranteed(SCSOA) RG = 82, non repetitive Short Circuit SOA Capability 2nd generation HDMOSTM processPC TC = 25C 150 W Low VCE(SAT)TJ -55 ... +150 C - for low on-state cond