Скачать даташит для ixtk120n20p_ixtq120n20p:

IXTK 120N20PPolarHTTMVDSS = 200 VIXTQ 120N20PPower MOSFETID25 = 120 A RDS(on) 22 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VGVGS Continuous 20 VD(TAB)SVGSM Transient 30 VID25 TC = 25 C 120 ATO-3P (IXTQ)ID(RMS) External lead current limit 75 AIDM TC = 25 C, pulse width limited by TJM 300 AIAR TC = 25 C60 AEAR TC = 25 C60 mJGD (TAB)EAS TC = 25 C 2.0 J Sdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nsG = Gate D = DrainTJ 175 C, RG = 4 S = Source TAB = DrainPD TC = 25 C 714 WTJ -55 ... +175 CTJM 175 CFeaturesTstg -55 ... +175 ClInternational standard packagesTL 1.6 mm (0.062 in.) from case for 10 s 300