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Advance Technical InformationTrenchPTM VDSS = - 200VIXTK120P20TPower MOSFETs ID25 = - 120AIXTX120P20T RDS(on) 30m trr 300nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C - 200 V DSVDGR TJ = 25C to 150C, RGS = 1M - 200 VTabVGSS Continuous 15 VVGSM Transient 25 VPLUS247 (IXTX)ID25 TC = 25C -120 AIDM TC = 25C, Pulse Width Limited by TJM - 400 AIA TC = 25C -100 AEAS TC = 25C3 JGDTabSdv/dt IS IDM, VDD VDSS, TJ 150C 10 V/nsPD TC = 25C 1040 WG = Gate D = DrainS = Source Tab = DrainTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CFeaturesTL 1.6mm (0.062 in.) from Case for 10s 300 C Avalanche RatedTSOLD Plastic Body for 10s 2
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ixtk120p20t ixtx120p20t.pdf Проектирование, MOSFET, Мощность
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