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IXTK 150N15PPolarHTTMVDSS = 150 VIXTQ 150N15PPower MOSFETID25 = 150 A RDS(on) 13 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VGD (TAB)VGS Continuous 20 VDSVGSM Transient 30 VID25 TC = 25 C 150 ATO-3P (IXTQ)ID(RMS) External lead current limit 75 AIDM TC = 25 C, pulse width limited by TJM 340 AIAR TC = 25 C60 AEAR TC = 25 C80 mJ GD (TAB)SEAS TC = 25 C 2.5 Jdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nsG = Gate D = DrainTJ 175 C, RG = 4 S = Source TAB = DrainPD TC = 25 C 714 WTJ -55 ... +175 CTJM 175 CFeaturesTstg -55 ... +175 ClInternational standard packageslTL 1.6 mm (0.062 in.) from case for 10 s 300