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ixtk170p10p_ixtx170p10pixtk170p10p_ixtx170p10p

PolarPTM VDSS = -100V IXTK170P10PID25 = -170APower MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C, RGS = 1M -100 V GD (TAB)SVGSS Continuous 20 VVGSM Transient 30 VID25 TC = 25C -170 APLUS247 (IXTX)ILRMS Lead Current Limit, RMS -160 AIDM TC = 25C, Pulse Width Limited by TJM - 510 AIA TC = 25C -170 AEAS TC = 25C 3.5 J (TAB)dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/nsPD TC = 25C 890 WG = Gate D = DrainS = Source TAB = DrainTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CTL 1.6mm (0.062 in.) from Case for 10s 300 CFeaturesTSOLD Plastic Body for 10s 260 C International Standard PackagesMd Mounting Force (PLUS247) 2

 

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 ixtk170p10p ixtx170p10p.pdf Проектирование, MOSFET, Мощность

 ixtk170p10p ixtx170p10p.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixtk170p10p ixtx170p10p.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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