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Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH110N65C4GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30nsIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VVGEM Transient 30 VGC TabIC25 TC = 25C (Chip Capability) 234 AEILRMS Terminal Current Limit 160 AIC110 TC = 110C 110 AG = Gate C = CollectorICM TC = 25C, 1ms 470 AE = Emitter Tab = CollectorSSOA VGE = 15V, TVJ = 150C, RG = 2 ICM = 220 A(RBSOA) Clamped Inductive Load @VCE VCEStsc VGE= 15V, VCE = 360V, TJ = 150C 10 sFeatures(SCSOA) RG = 10, Non Repetitive PC TC = 25C 880 WOptimized for 20-60kHz Switching Square RBSOATJ -55 ... +175 C Avalanche Capability