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VCES = 650VXPTTM 650V GenX4TM IXXN110N65B4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C (Chip Capability) 215 ACIC25 Terminal Current Limit 200 AIC110 TC = 110C 110 AG = Gate, C = Collector, E = EmitterIF110 TC = 110C 70 A either emitter terminal can be used asMain or Kelvin EmitterICM TC = 25C, 1ms 730 ASSOA VGE = 15V, TVJ = 150C, RG = 2 ICM = 220 AFeatures(RBSOA) Clamped Inductive Load @VCE VCEStsc VGE = 15V, VCE = 360V, TJ = 150C 10 sInternational Stan