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VCES = 650VXPTTM 650V GenX4TM IXXN110N65C4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.35V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VE VGEM Transient 30 VCIC25 TC = 25C (Chip Capability) 210 AIC25 Terminal Current Limit 200 AG = Gate, C = Collector, E = EmitterIC110 TC = 110C 110 A either emitter terminal can be used asMain or Kelvin EmitterIF110 TC = 110C 70 AICM TC = 25C, 1ms 470 AFeaturesSSOA VGE = 15V, TVJ = 150C, RG = 2 ICM = 220 A(RBSOA) Clamped Inductive Load @VCE VCESInternational Standard Packagetsc VGE = 15V, VCE = 360V, T
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ixxn110n65c4h1.pdf Проектирование, MOSFET, Мощность
ixxn110n65c4h1.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
ixxn110n65c4h1.pdf База данных, Инновации, ИМС, Транзисторы



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