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VCES = 650VXPTTM 650V GenX4TM IXXR110N65B4H1IC110 = 70Aw/ Sonic Diode VCE(sat) 2.20V (Electrically Isolated Tab)tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCVGES Continuous 20 V Isolated TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 150 AG = Gate C = CollectorIC110 TC = 110C 70 AE = EmitterIF110 TC = 110C 48 AICM TC = 25C, 1ms 460 ASSOA VGE = 15V, TVJ = 150C, RG = 2 ICM = 220 A(RBSOA) Clamped Inductive Load @VCE VCESFeaturestsc VGE = 15V, VCE = 360V, TJ = 150C 10 s(SCSOA) RG = 82, Non Repetitive Silicon Chip on Direct-Copper BondPC TC = 25C 455 W(DCB) Substrate Isolated Mounting SurfaceTJ -55 ... +175 C