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Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3GenX3TM IC110 = 10A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTabVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C 30 A G = Gate C = CollectorIC110 TC = 110C 10 A E = Emitter Tab = CollectorICM TC = 25C, 1ms 54 AIA TC = 25C 5 AEAS TC = 25C 50 mJFeaturesSSOA VGE = 15V, TVJ = 150C, RG = 50 ICM = 20 AOptimized for 20-60kHz Switching(RBSOA) Clamped Inductive Load @VCE VCESSquare RBSOAtsc VGE = 15V, VCE = 360V, TJ = 150C 8 s Avalanche Rated(SCSOA) RG = 150, Non Repetitive Short Ci