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Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1MGenX3TM w/Diode IC110 = 7A VCE(sat) 2.6V (Electrically Isolated Tab)tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGC Isolated TabEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 15 A E = EmitterIC110 TC = 110C 7 AIF110 TC = 110C 13 AICM TC = 25C, 1ms 50 AIA TC = 25C 5 AFeaturesEAS TC = 25C 100 mJSSOA VGE = 15V, TVJ = 150C, RG = 50 ICM = 20 A Optimized for 20-60kHz SwitchingPlastic Overmolded Tab for Electrical(RBSOA) Clamped Inductive Load @VCE VCESIsolationtsc VGE =
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ixyp10n65c3d1m.pdf Проектирование, MOSFET, Мощность
ixyp10n65c3d1m.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
ixyp10n65c3d1m.pdf База данных, Инновации, ИМС, Транзисторы



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