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IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56 TJ = 25C to 150C VDSS 600 V PDC = 350 TJ = 25C to 150C; RGS = 1 M VDGR 600 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25 18 A Tc = 25C, pulse width limited by TJM IDM 90 A Tc = 25C IAR 18 A Tc = 25C EAR TBD mJ IS IDM, di/dt 100A/s, VDD VDSS, 5 V/ns Tj 150C, RG = 0.2 dv/dt IS = 0 >200 V/ns PDC 350 W Tc = 25C, Derate 4.4W/C above 25C PDHS TBD W Tc = 25C PDAMB 3.0 W RthJC T