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SEMICONDUCTORKGT15N120KDATECHNICAL DATAGeneral DescriptionKEC NPT Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10usExtremely enhanced avalanche capabilityMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCESCollector-Emitter Voltage 1200 VVGES 20Gate-Emitter Voltage V@TC=25 30 AICCollector Current@TC=100 15 AICM*Pulsed Collector Current 45 ADiode Continuous Forward Current @TC=100 IF15 AIFMDiode Maximum Forward Current 45 A@TC=25 200 WPDMaximum Power Dissipation@TC=100 80 WTjMaximum Junction Temperature 150Tstg -55 to + 150Storage Temperature