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KS8550L PNP Silicon Transistor Descriptions PIN Connection High current application Features Complementary pair with KS8050L Ordering Information Type NO. Marking Package Code KU KS8550L SOT-23 Device Code HFE Grade Year& Week Code AUK Dalian Absolute maximum ratings Ta=25C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -25 V Emitter-base voltage VEBO -6 V Collector current IC -1500 mA Collector dissipation PC 350 mW Junction temperature Tj 150 C Storage temperature range Tstg -55~150 C Electrical Characteristics Ta=25C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-100uA, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-2mA, IB=0 -25 - - V Emitter-Base breakdown vol