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KSE13007F NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONSTO-220F High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage VEBO 9 V Collector Current (DC) IC 8 A Collector Current (Pulse) IC 16 A Base Current IB 4 A Collector Dissipation (TC=25 ) PC 40 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Base 2. Collector 3. EmitterELECTRICAL CHARACTERISTICS (Tc=25 )Characteristic Symbol Test Condition Min Typ Max UnitCollector- Base Breakdown Voltage VCEO (sus) IC = 10mA, IB = 0 400 V Emitter- Base Breakdown Voltage IEBO VEB = 9V, IC = 0 1 mADC Current Gain hFE VCE = 5V, IC = 2A 8 60 VCE = 5V, IC = 5A 5 30 VCE(sat) IC = 2A, IB = 0.4A 1 VCollect