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KSE45H SeriesGeneral Purpose Power Switching Applications Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A Fast Switching Speeds Complement to KSE44HTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage : KSE45H 1,2 - 30 V : KSE45H 4,5 - 45 V : KSE45H 7,8 - 60 V : KSE45H 10,11 - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 10 A ICP *Collector Current (Pulse) - 20 A PC Collector Dissipation (TC=25C) 50 W PC Collector Dissipation (Ta=25C) 1.67 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 CElectrical Characteristics TC=25C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. Units ICES Collector Cut-off Current VCE = Ra