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KSE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to KSE700/701/702/703TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Units VCBO Collector- Base Voltage : KSE800/801 60 V : KSE802/803 80 VB VCEO Collector-Emitter Voltage : KSE800/801 60 V : KSE802/803 80 VVEBO Emitter-Base Voltage 5 VIC Collector Current 4 AR1 R2IB Base Current 0.1 APC Collector Dissipation (TC=25C) 40 W ER1 10kR2 0.6kTJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 CElectrical Characteristics TC=25C unless otherwise notedSymbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emit