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isc Silicon NPN Power Transistor KSE44H11DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 60(Min)@ (V = 1V, I = 2A)FE CE CLow Saturation Voltage-: V = 1.0V(Max)@ (I = 8A, I = 0.4A)CE(sat) C BComplement to Type KSE45H11Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver in DC/DC converters andactuators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 10 ACI Collector Current-Pulse 20 ACPTotal Power DissipationP 50 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon