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KSR1205 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=10 ) Complement to KSR2205ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 50VEmitter-Base Voltage VEBO 10mACollector Current IC 100mWCollector Dissipation PC 300Junction Temperature TJ 150Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Collector 3. BaseELECTRICAL CHARACTERISTICS (T =25 )ACharacteristic Symbol Test Conditions Min Typ Max UnitVCollector-Base Breakdown Voltage BVCBO IC=10 , IE=0 50VCollector-Emitter Breakdown Voltage BVCEO IC=100 , IB=0 50VCB=40V, IE=0 Collector Cut-off Current ICBO0.1VCE=5V, IC=5mADC Current Gain hFE 30IC=