Скачать даташит для l2sc3356lt1g_l2sc3356lt3g:

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION12ShippingDevice MarkingSOT-23L2SC3356LT1GR24 3000/Tape & ReelS-L2SC3356LT1GL2SC3356LT3G10000/Tape & ReelR24S-L2SC3356LT3GFEATURES We declare that the material of product compliance with RoHS requirements. Low Noise and High GainNF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power GainMAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHzABSOLUTE MAXIMUM RATINGS (TA = 25 C)Collector to Base Volta