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MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000A/ s rr F This device is for PFC, UPS & Inverter applications. Maximum junction temperature 175C Applications PFC Welder UPS IH Cooker PV Inverter TO-247 G C E Maximum RatingParameter Symbol Rating Unit Collector-emitter voltage V 650 V CET =25C 80 A C DC collector current, limited by T IC vjmax T =100C 40 A C Pulsed collector current, t limited by T I 160 A p jvjmax CpulsTurn off safe operating area V 600V, T