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MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachips Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175C speed and excellent quality. Applications Inverters Welding converters High range switching frequency converters TO-247 G C E Maximum Rating Parameter Symbol Rating Unit Collector-emitter voltage V 650 V CE T =25C 80 A C DC collector current, limited by T I vjmax C T =100C 40 A C Pulsed collector current, t limited by T I 120 A p vjmax Cpuls T =25C 40 C Diode forward current limited by T I A vjmax F T =100C 20 C Diode pulsed current, t limited by T I 120 A p vjmax FpulsGate-emitter voltage V 20 V