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MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GSquality. Applications MDF10N65B is suitable device for SMPS, high Speed switching and general purpose applications. Power Supply PFC High Current, High Speed Switching DGTO-220F MDF Series SAbsolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V TC=25oC 10.0* A Continuous Drain Current ID TC=100oC 5.0* A Pulsed Drain Current(1) IDM 40* A TC=25oC 47.7 W Power Dissipation PD Derate above 25 oC 0.38 W/oC Repetitive