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Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC currenton state resistance and gate charge, and enhance avalanche capability. capabilityThese devices are particularly suited for medium voltage application such as charger, adapter, notebook computer power management and other APPLICATIONS Power Managementlighting dimming powered circuits, and low in-line power loss that are Synchronous Rectificationneeded in a very small outline surface mount package. Load SwitchPIN CONFIGURATION (TO-220