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Preliminary-MEE4298T N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)11.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on state resistance and gate charge, and enhance avalanche capability. Exceptional on-resistance and maximum DC currentThese devices are particularly suited for medium voltage application such capabilityas charger, adapter, notebook computer power management and other lighting dimming powered circuits, and low in-line power loss that are APPLICATIONS Power Managementneeded in a very small outline surface mount package. Synchronous RectificationPIN CONFIGURATI