Скачать даташит для mje13003:

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeaturesNPN SILICON POWER Reverse Biased SOA with Inductive Loads @ TC = 100_CTRANSISTORS Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C300 AND 400 VOLTStc @ 1 A, 100_C is 290 ns (Typ) 700 V Blocking Capability 40 WATTS SOA and Switching Applications Information Pb-Free Package is Available*MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO(sus) 400 Vdc TO-225Collector-Emitter Voltag