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SEMICONDUCTOR MJE13003HVTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.AHIGH VOLTAGE AND HIGH SPEED BDCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1AHHigh Collector Voltage : VCBO=900V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3MAXIMUM RATING (Ta=25 )G 2.9 MAXMH 1.0 MAXCHARACTERISTIC SYMBOL RATING UNITJ 1.9 MAXO _+K 0.75 0.15NVCBOCollector-Base Voltage 900 V P_+L 15.50 0.51 2 3_+M 2.3 0.1VCEOCollector-Emitter Voltage 530 V_+N 0.65 0.15O 1.61. EMITTERVEBOEmitter-Base Voltage 9 VP 3.4 MAX2. COLLECTOR3. BASEICDC 1.5Collector Current AICPPulse 3TO-126IBBase Current 0.75 APC20 WCollector Power Dissipation (Tc=25 )TjJunction Temperature 150